22 January 2010 InAs/GaSb type II superlattices for advanced 2nd and 3rd generation detectors
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Abstract
InAs/GaSb short-period superlattices (SL) based on GaSb, InAs and AlSb have proven their great potential for high performance infrared detectors. Lots of interest is currently focused on the development of short-period InAs/GaSb SLs for advanced 2nd and 3rd generation infrared detectors between 3 - 30 μm. For the fabrication of mono- and bispectral thermal imaging systems in the mid-wavelength infrared region (MWIR) a manufacturable technology for high responsivity thermal imaging systems has been developed. InAs/GaSb short-period superlattices can be fabricated with up to 1000 periods in the intrinsic region without revealing diffusion limited behavior. This enables the fabrication of InAs/GaSb SL camera systems with high responsivity comparable to state of the art CdHgTe and InSb detectors. The material system is also ideally suited for the fabrication of dual-color MWIR/MWIR InAs/GaSb SL camera systems with high quantum efficiency for missile approach warning systems with simultaneous and spatially coincident detection in both spectral channels.
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Martin Walther, Robert Rehm, Johannes Schmitz, Joachim Fleissner, Frank Rutz, Lutz Kirste, Ralf Scheibner, Joachim Wendler, and Johann Ziegler "InAs/GaSb type II superlattices for advanced 2nd and 3rd generation detectors", Proc. SPIE 7608, Quantum Sensing and Nanophotonic Devices VII, 76081Z (22 January 2010); doi: 10.1117/12.842065; https://doi.org/10.1117/12.842065
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