22 January 2010 High-sensitivity visible and IR (1550nm) Si nanowire photodetectors
Author Affiliations +
Abstract
Vertical silicon nanowire detectors with high phototransistive gain have been demonstrated and the principles responsible for the high gain have been reported in recent publications. The emphasis of this paper is (a) the fabrication technology of silicon nanowire array detectors that can be integrated with Si VLSI and (b) the ability of sub-bandgap detection to achieve ultrawide band (from UV to IR) responsivity. We have demonstrated responsivity of greater than 100 A/W at 1550 nm for single crystal silicon nanowires to detect picowatts of IR light, the highest record ever reported for single crystal silicon detectors.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hongkwon Kim, Hongkwon Kim, Arthur Zhang, Arthur Zhang, James Cheng, James Cheng, Yu-Hwa Lo, Yu-Hwa Lo, } "High-sensitivity visible and IR (1550nm) Si nanowire photodetectors", Proc. SPIE 7608, Quantum Sensing and Nanophotonic Devices VII, 76082F (22 January 2010); doi: 10.1117/12.847060; https://doi.org/10.1117/12.847060
PROCEEDINGS
7 PAGES


SHARE
RELATED CONTENT


Back to Top