24 February 2010 Growth of InAs/Sb:GaAs quantum dots by the antimony surfactant mediated metal organic chemical vapor deposition for laser fabrication in the 1.3 μm band
Author Affiliations +
Abstract
We present a general method that improves the emission efficiency of InAs quantum dots (QDs) fabricated by antimony surfactant-mediated growth. Unlike conventional InAs/GaAs QDs, we show that the control of the interface properties of the InAs/Sb:GaAs QDs is crucial. Our method consists in growing InAs QDs on an antimony-irradiated GaAs surface, in order to exploit the surfactant properties of antimony, and then removing the excess segregated antimony by applying a high arsenic pressure before capping. In such a way, one benefits from the advantages of the antimony-surfactant mediated growth (high density QDs, no coalescence, no emission blueshift after annealing), without the detrimental formation of antimony-induced non-radiative defects. We show that the lasing characteristics of InAs/Sb:GaAs QD lasers grown by metal organic chemical vapor deposition in the 1.3 μm band are drastically improved, with a reduced threshold current density and higher internal quantum efficiency. These studies advance the understanding of key processes in antimony-mediated growth of InAs QDs and will allow full utilization of its advantages for integration in opto-electronic devices.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Denis Guimard, Denis Guimard, Damien Bordel, Damien Bordel, Mitsuru Ishida, Mitsuru Ishida, Masao Nishioka, Masao Nishioka, Yuki Wakayama, Yuki Wakayama, Yu Tanaka, Yu Tanaka, Hisao Sudo, Hisao Sudo, Tsuyoshi Yamamoto, Tsuyoshi Yamamoto, Hayato Kondo, Hayato Kondo, Mitsuru Sugawara, Mitsuru Sugawara, Yasuhiko Arakawa, Yasuhiko Arakawa, } "Growth of InAs/Sb:GaAs quantum dots by the antimony surfactant mediated metal organic chemical vapor deposition for laser fabrication in the 1.3 μm band", Proc. SPIE 7610, Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling VII, 76100D (24 February 2010); doi: 10.1117/12.842864; https://doi.org/10.1117/12.842864
PROCEEDINGS
11 PAGES


SHARE
Back to Top