18 February 2010 Determination of nonradiative recombination in high quantum efficiency GaAs/InGaP heterostructures
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Proceedings Volume 7614, Laser Refrigeration of Solids III; 76140E (2010) https://doi.org/10.1117/12.845054
Event: SPIE OPTO, 2010, San Francisco, California, United States
Abstract
We characterize high quantum efficiency double GaAs/InGaP heterostructures used in semiconductor laser cooling. To identify potential samples for laser cooling, measuring the nonradiative recombination rate coefficient is necessary. We describe a technique called power dependent photoluminescence measurement, which when combined with timeresolved photoluminescence lifetime determines the nonradiative recombination coefficient.
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Chia-Yeh Li, Chia-Yeh Li, Chengao Wang, Chengao Wang, Michael P. Hasselbeck, Michael P. Hasselbeck, Mansoor Sheik-Bahae, Mansoor Sheik-Bahae, Kevin J. Malloy, Kevin J. Malloy, } "Determination of nonradiative recombination in high quantum efficiency GaAs/InGaP heterostructures", Proc. SPIE 7614, Laser Refrigeration of Solids III, 76140E (18 February 2010); doi: 10.1117/12.845054; https://doi.org/10.1117/12.845054
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