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5 February 2010 Advanced characterization techniques for high power VCSELs
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Abstract
The performance of high power VCSELs in a specific application depends on the geometrical and thermal design as well as on the quality of the epitaxially grown material. Due to the relatively high heat load in densely packed high power arrays the temperature in the active zone and the DBR mirrors changes significantly with the applied current and the traditional characterization methods become less meaningful than for low power devices. This paper presents a method to measure temperature independent power curves with the help of short pulse techniques and data mapping at different heat sink temperatures. In addition the internal quantum efficiency, the transparency current and the gain coefficient are measured by a novel method which operates the VCSEL material as an edge emitter and applies a cut-back technique. The optical losses in the DBR mirrors are determined using external feedback. In summary all relevant parameters which determine the quality of an epitaxial design are measured independently and can be directly compared with modeling and help to optimize the high power VCSEL performance.
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Holger Moench, Johannes Baier, Stephan Gronenborn, Johanna Kolb, Michael Miller, Pavel Pekarski, Marcel Schemmann, and Adriaan Valster "Advanced characterization techniques for high power VCSELs", Proc. SPIE 7615, Vertical-Cavity Surface-Emitting Lasers XIV, 76150G (5 February 2010); https://doi.org/10.1117/12.839953
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