12 February 2010 An aluminum-free mid-infrared quantum cascade laser
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Proceedings Volume 7616, Novel In-Plane Semiconductor Lasers IX; 76160M (2010) https://doi.org/10.1117/12.841142
Event: SPIE OPTO, 2010, San Francisco, California, United States
Mid-infrared intersubband absorption in InGaAs/GaAsSb multiple quantum wells grown lattice-matched to InP substrates by molecular beam epitaxy has been studied experimentally. Intersubband absorption in a broad wavelength region (5.8 - 11.6 μm) is observed in samples with well widths ranging between 4.5 and 12 nm. A conduction band offset at the InGaAs/GaAsSb heterointerface of 360 meV gives an excellent agreement between the theoretically calculated ISB transition energies and the Fourier-transform infrared spectroscopy measurements over the whole range of well widths under investigation. Two kinds of intersubband devices based on the InGaAs/GaAsSb material system are presented: a quantum well infrared photodetector operating at a wavelength of 5.6μm and an aluminum-free quantum cascade laser. The presented quantum cascade laser emits at a wavelength of 11.3 μm, with a threshold current density of 1.7 kA/cm2 at 78 K.
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M. Nobile, H. Detz, A. M. Andrews, P. Klang, W. Schrenk, G. Strasser, "An aluminum-free mid-infrared quantum cascade laser", Proc. SPIE 7616, Novel In-Plane Semiconductor Lasers IX, 76160M (12 February 2010); doi: 10.1117/12.841142; https://doi.org/10.1117/12.841142

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