12 February 2010 An aluminum-free mid-infrared quantum cascade laser
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Proceedings Volume 7616, Novel In-Plane Semiconductor Lasers IX; 76160M (2010) https://doi.org/10.1117/12.841142
Event: SPIE OPTO, 2010, San Francisco, California, United States
Mid-infrared intersubband absorption in InGaAs/GaAsSb multiple quantum wells grown lattice-matched to InP substrates by molecular beam epitaxy has been studied experimentally. Intersubband absorption in a broad wavelength region (5.8 - 11.6 μm) is observed in samples with well widths ranging between 4.5 and 12 nm. A conduction band offset at the InGaAs/GaAsSb heterointerface of 360 meV gives an excellent agreement between the theoretically calculated ISB transition energies and the Fourier-transform infrared spectroscopy measurements over the whole range of well widths under investigation. Two kinds of intersubband devices based on the InGaAs/GaAsSb material system are presented: a quantum well infrared photodetector operating at a wavelength of 5.6μm and an aluminum-free quantum cascade laser. The presented quantum cascade laser emits at a wavelength of 11.3 μm, with a threshold current density of 1.7 kA/cm2 at 78 K.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. Nobile, M. Nobile, H. Detz, H. Detz, A. M. Andrews, A. M. Andrews, P. Klang, P. Klang, W. Schrenk, W. Schrenk, G. Strasser, G. Strasser, } "An aluminum-free mid-infrared quantum cascade laser", Proc. SPIE 7616, Novel In-Plane Semiconductor Lasers IX, 76160M (12 February 2010); doi: 10.1117/12.841142; https://doi.org/10.1117/12.841142


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