12 February 2010 High performance short wavelength InP-based quantum cascade lasers
Author Affiliations +
Proceedings Volume 7616, Novel In-Plane Semiconductor Lasers IX; 761612 (2010); doi: 10.1117/12.847188
Event: SPIE OPTO, 2010, San Francisco, California, United States
Abstract
We review the development of high performance, short wavelength (3 μm < λ < 3.8 μm) quantum cascade lasers (QCLs) based on the deep quantum well InGaAs/AlAsSb/InP materials system. Use of this system has enabled us to demonstrate room temperature operation at λ ~ 3.1 μm, the shortest room temperature lasing wavelength yet observed for InP-based QCLs. We demonstrate that significant performance improvements can be made by using strain compensated material with selective incorporation of AlAs barriers in the QCL active region. This approach provides reduction in threshold current density and increases the maximum optical power. In such devices, room-temperature peak output powers of up to 20 W can be achieved at λ ~ 3.6 μm, with high peak powers of around 4 W still achievable as wavelength decreases to 3.3 μm.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Dmitry G. Revin, J. Paul Commin, Shiyong Y. Zhang, Andrey B. Krysa, Kenneth Kennedy, John W. Cockburn, "High performance short wavelength InP-based quantum cascade lasers", Proc. SPIE 7616, Novel In-Plane Semiconductor Lasers IX, 761612 (12 February 2010); doi: 10.1117/12.847188; https://doi.org/10.1117/12.847188
PROCEEDINGS
9 PAGES


SHARE
KEYWORDS
Quantum cascade lasers

Quantum wells

Temperature metrology

Antimony

Interfaces

Electroluminescence

Laser development

Back to Top