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12 February 2010 Mid-infrared emitters utilizing intersublevel transitions in self assembled InAs quantum dots
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Proceedings Volume 7616, Novel In-Plane Semiconductor Lasers IX; 76161A (2010) https://doi.org/10.1117/12.843033
Event: SPIE OPTO, 2010, San Francisco, California, United States
Abstract
We demonstrate room temperature electroluminescence from intersublevel transitions in self-assembled InAs quantum dots in GaAs/AlGaAs heterostructures. The quantum dot devices are grown on GaAs substrates in a Varian Gen II molecular beam epitaxy system. The device structure is designed specifically to inject carriers into excited conduction band states in the dots and force an optical transition between the excited and ground states of the dots. A downstream filter is designed to selectively extract carriers from the dot ground states. Electroluminescence measurements were made by Fourier Transform Infrared Spectroscopy in amplitude modulation step scan mode. Current-Voltage measurements of the devices are also reported. In addition, both single period and multi-period devices are grown, fabricated, characterized, and compared to each other. Finally, we discuss the use of plasmonic output couplers for these devices, and discuss the unique emission observed when the quantum dot layer sits in the near field of the plasmonic top contacts.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
T. Ribaudo, B. S. Passmore, D. C. Adams, X. Qian, S. Vangala, W. D. Goodhue, E. A. Shaner, S. A. Lyon, and D. Wasserman "Mid-infrared emitters utilizing intersublevel transitions in self assembled InAs quantum dots", Proc. SPIE 7616, Novel In-Plane Semiconductor Lasers IX, 76161A (12 February 2010); https://doi.org/10.1117/12.843033
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