12 February 2010 High-peak-power pulse generation with GHz repetition rate using a Q-switched 1060nm DBR tapered laser
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Proceedings Volume 7616, Novel In-Plane Semiconductor Lasers IX; 76161J (2010) https://doi.org/10.1117/12.839958
Event: SPIE OPTO, 2010, San Francisco, California, United States
Experimental results from a Q-switched three section tapered laser, with an InGaAs triple quantumwell (TQW) active region, consisting of a 2000 μm long tapered element, a 1000 μm ridge waveguide (RW) section and a 1000 μm long passive grating section with a 6th order surface grating were fabricated and investigated. For the generation of short optical pulses the tapered section was biased with a dc-current and the RW absorber section was modulated by a 1 GHz sinusoidal current. By biasing the tapered section with 4 A cw current and GHz sinusoidal modulation of the RW section, short pulses of ~75 ps width and a pulse power of 6.3 W corresponding to 470 pJ pulse energy is reached. The Q-switched pulses are single mode with a central emission wavelength of ~1064 nm and a FWHM spectral width ≤ 0.05 nm.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. Klehr, A. Klehr, B. Sumpf, B. Sumpf, K. H. Hasler, K. H. Hasler, J. Fricke, J. Fricke, A. Liero, A. Liero, Th. Hoffmann, Th. Hoffmann, G. Erbert, G. Erbert, G. Tränkle, G. Tränkle, } "High-peak-power pulse generation with GHz repetition rate using a Q-switched 1060nm DBR tapered laser", Proc. SPIE 7616, Novel In-Plane Semiconductor Lasers IX, 76161J (12 February 2010); doi: 10.1117/12.839958; https://doi.org/10.1117/12.839958

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