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12 February 2010 Manipulation of optical modes in quantum dot laser diodes by selective oxidation of high aluminum content AlGaAs layers
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Proceedings Volume 7616, Novel In-Plane Semiconductor Lasers IX; 76161T (2010) https://doi.org/10.1117/12.846843
Event: SPIE OPTO, 2010, San Francisco, California, United States
Abstract
We describe the effects created by selective oxidation of high aluminium content AlGaAs layers at the facets of 5-stack quantum dot edge-emitting 50μm stripe lasers. The steam oxidation affects only the facet areas of the devices, where unpumped sections are created. These unpumped regions alone enable reduction of the width of the lasing near-field spatial profile of up to 65% and the reduction of threshold in long devices by up to 30%. These effects are attributed to saturable absorber-type behaviour, where the absorber saturates first at the location of highest optical intensity, so allowing lasing over a smaller spatial area. Secondly, a combination of self-heating at the facets and the saturable absorption generates novel saw-toothed wavelength-time profiles. A model for the behaviour behind all of these results is proposed and backed up with experimental data.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
G. J. Michell, P. M Smowton, and H. D. Summers "Manipulation of optical modes in quantum dot laser diodes by selective oxidation of high aluminum content AlGaAs layers", Proc. SPIE 7616, Novel In-Plane Semiconductor Lasers IX, 76161T (12 February 2010); https://doi.org/10.1117/12.846843
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