Paper
11 February 2010 Increased pressure digital metalorganic vapor phase epitaxy system with high-speed switching valves for growing high-In-content GaInN
Hiroshi Amano, Kensuke Nagata, Kentaro Nagamatsu, Daisuke Iida, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki
Author Affiliations +
Abstract
Increased-pressure metalorganic vapor phase epitaxy (MOVPE) system with high speed switching valves is found to be effective for growing In-rich GaInN at a high temperature. High-speed switching valves enable the atomic layer epitaxy of high quality AlGaN at a low temperature, by which we can grow thin AlGaN capping layer without the thermal decomposition of underlying In-rich GaInN. This new growth technology sheds light on the digital alloy growth for the development of high-efficiency nitride-based visible long -wavelength light emitters.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hiroshi Amano, Kensuke Nagata, Kentaro Nagamatsu, Daisuke Iida, Motoaki Iwaya, Satoshi Kamiyama, and Isamu Akasaki "Increased pressure digital metalorganic vapor phase epitaxy system with high-speed switching valves for growing high-In-content GaInN", Proc. SPIE 7617, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIV, 761702 (11 February 2010); https://doi.org/10.1117/12.848616
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Focus stacking software

Switching

Light emitting diodes

Vapor phase epitaxy

Solids

Thermodynamics

External quantum efficiency

Back to Top