Recent progress of 220-280 nm-band AlGaN based deep-UV LEDs

Hideki Hirayama

doi:10.1117/12.845512

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11 February 2010 Recent progress of 220-280 nm-band AlGaN based deep-UV LEDs

Hideki Hirayama

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Proceedings Volume 7617, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIV; 76171G (2010) https://doi.org/10.1117/12.845512
Event: SPIE OPTO, 2010, San Francisco, California, United States

Abstract

We demonstrated 222-282 nm AlGaN-based efficient deep-ultraviolet (DUV) light-emitting diodes (LEDs) fabricated on low threading dislocation density (TDD) AlN template. Low TDD AlN on sapphire were realized by using ammonia (NH₃) pulse-flow multilayer (ML) growth technique. We obtained quite high IQE (~80%) from slightly-Inincorporated (0.3%) InAlGaN QWs and obtained over 10 mW CW output power for 280 nm-band InAlGaN based LED. The maximum output power obtained were over 10 mW for 264-282 nm LEDs, 1.2-5mW for 240-256 nm LEDs and sub-milliwatt for 222-237 nm LEDs. The maximum external quantum efficiency (EQE) of 280 nm-band LED was 1.2%.

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Hideki Hirayama "Recent progress of 220-280 nm-band AlGaN based deep-UV LEDs", Proc. SPIE 7617, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIV, 76171G (11 February 2010); https://doi.org/10.1117/12.845512

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