11 February 2010 Improved performance of near-ultraviolet InGaN/AlGaN LEDs with various insertion structures
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Abstract
In this study, two approaches using various insertion structures are proposed for the near-UV LEDs. One is through a single MOCVD process where a heavily Mg-doped GaN insertion layer (HD-IL) technique is employed to improve crystalline quality of the GaN layer and followed by rest of required GaN-based LED structure. Another approach was demonstrated by the near-UV LEDs with an embedded distributed SiO2-disk structure. The periodically spaced hexagonal disk-shaped SiO2 mask array was deposited on the GaN/sapphire template and followed by the MOCVD regrowth process. These improvements contribute the high-performance 380-nm LEDs with enhanced output powers by 20-40% in magnitude.
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Dong-Sing Wuu, Dong-Sing Wuu, Wen-Yu Lin, Wen-Yu Lin, Ying-Chiuan Tsai, Ying-Chiuan Tsai, Shih-Cheng Huang, Shih-Cheng Huang, Ray-Hua Horng, Ray-Hua Horng, Chien-Min Liu, Chien-Min Liu, } "Improved performance of near-ultraviolet InGaN/AlGaN LEDs with various insertion structures", Proc. SPIE 7617, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIV, 76171H (11 February 2010); doi: 10.1117/12.845439; https://doi.org/10.1117/12.845439
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