22 March 2010 Performance of a prototype amorphous silicon active pixel sensor array using a-Se for direct x-ray conversion
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Abstract
Active pixel sensor (APS) circuits are an alternate to passive pixel sensor (PPS) technology which, when integrated with a direct detection amorphous selenium (a-Se) photoconductor, can enable high performance, digital x-ray imaging applications such as real-time fluoroscopy due to their better signal-to-noise ratios at low dose. This paper presents experimental imaging results from a prototype 64×64 APS pixel array fabricated in a-Si technology. The prototype APS array is coated with a one millimeter thick layer of a-Se and the experimental results are evaluated using a standard radiography x-ray beam quality RQA5. The APS experimental results are compared with a standard real-time detector (FPD14) imaging array under the same x-ray beam conditions. In addition, we will theoretically examine the best achievable performance for our APS array fabricated in state-of-the-art a-Si technology and compare the results to state-of-the-art PPS panels for real-time fluoroscopy.
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M. H. Izadi, O. Tousignant, M. F. Mokam, M. Yazdandoost, N. Safavian, H. Mani, L. Laperriere, K. S. Karim, "Performance of a prototype amorphous silicon active pixel sensor array using a-Se for direct x-ray conversion", Proc. SPIE 7622, Medical Imaging 2010: Physics of Medical Imaging, 76223V (22 March 2010); doi: 10.1117/12.845528; https://doi.org/10.1117/12.845528
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