23 March 2010 Silicon nanowire metal-semiconductor-metal photodetectors
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Abstract
Silicon nanowire photodetectors were fabricated for large area digital imaging applications. An array of silicon nanowires fabricated by plasma enhanced chemical vapor deposition (PECVD) was incorporated into lateral metalsemiconductor- metal (MSM) photodetectors with 2 μm electrode spacing. A collection efficiency of up to 0.36 and responsivity of 0.136 was measured using an applied bias of -10V. The rise time in response to a blue LED light source was measured to be 35.2 μs.
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Michael M. Adachi, Kai Wang, Feng Chen, Karim S. Karim, "Silicon nanowire metal-semiconductor-metal photodetectors", Proc. SPIE 7622, Medical Imaging 2010: Physics of Medical Imaging, 76224M (23 March 2010); doi: 10.1117/12.845503; https://doi.org/10.1117/12.845503
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