Silicon nanowire metal-semiconductor-metal photodetectors

Michael M. Adachi; Kai Wang; Feng Chen; Karim S. Karim

doi:10.1117/12.845503

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23 March 2010 Silicon nanowire metal-semiconductor-metal photodetectors

Michael M. Adachi, Kai Wang, Feng Chen, Karim S. Karim

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Proceedings Volume 7622, Medical Imaging 2010: Physics of Medical Imaging; 76224M (2010) https://doi.org/10.1117/12.845503
Event: SPIE Medical Imaging, 2010, San Diego, California, United States

Abstract

Silicon nanowire photodetectors were fabricated for large area digital imaging applications. An array of silicon nanowires fabricated by plasma enhanced chemical vapor deposition (PECVD) was incorporated into lateral metalsemiconductor- metal (MSM) photodetectors with 2 μm electrode spacing. A collection efficiency of up to 0.36 and responsivity of 0.136 was measured using an applied bias of -10V. The rise time in response to a blue LED light source was measured to be 35.2 μs.

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Michael M. Adachi, Kai Wang, Feng Chen, and Karim S. Karim "Silicon nanowire metal-semiconductor-metal photodetectors", Proc. SPIE 7622, Medical Imaging 2010: Physics of Medical Imaging, 76224M (23 March 2010); https://doi.org/10.1117/12.845503

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