21 August 1987 Electronic Transport In Glassy Silicon - Backbone Polymers
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Proceedings Volume 0763, Physics of Amorphous Semiconductor Devices; (1987) https://doi.org/10.1117/12.940166
Event: OE LASE'87 and EO Imaging Symposium, 1987, Los Angeles, CA, United States
Abstract
Polysilylenes, organic polymers with silicon backbone, represent a new class of dielectric materials capable of transporting injected holes. Charge transport in poly(methylphenylsilylene), a typical representative of these polymers, is thermally activated and relatively non-dispersive over a wide range of temperatures. The carrier drift mobility is high for organic glasses, near 10-4 cm2N.s. at E = 105 V/cm, and field dependent at T < Tg. The charge transport in polysilylenes has most of the characteristics of hopping transport among discrete states, but it is insensitive to the nature of the side groups (aromatic or aliphatic) and the molecular weight of the polymer. The proposed mechanism of transport is that of hopping among rather short segments of the silicon chain.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. Stolka and M. Abkowitz "Electronic Transport In Glassy Silicon - Backbone Polymers", Proc. SPIE 0763, Physics of Amorphous Semiconductor Devices, (21 August 1987); doi: 10.1117/12.940166; https://doi.org/10.1117/12.940166
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