Paper
21 August 1987 Influence Of Density Of States Distribution And Trapping Rates On The Transient Response In Amorphous Semiconductors
G. J. Adriaenssens, G. Seynhaeve, H. Michiel
Author Affiliations +
Proceedings Volume 0763, Physics of Amorphous Semiconductor Devices; (1987) https://doi.org/10.1117/12.940162
Event: OE LASE'87 and EO Imaging Symposium, 1987, Los Angeles, CA, United States
Abstract
A discrete version of the multiple trapping transport model for amorphous semiconductors is presented and its application to transient photocurrents demonstrated. The relationship between the average energy of a thermalizing carrier distribution and the demarcation energy of the TROK formalism is discussed in connection with structured density of states distributions. A novel way to calculate the transit time in a time-of-flight simulation is introduced and subsequently used to examine drift mobilities for various a-Si:H inspired density of states models.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
G. J. Adriaenssens, G. Seynhaeve, and H. Michiel "Influence Of Density Of States Distribution And Trapping Rates On The Transient Response In Amorphous Semiconductors", Proc. SPIE 0763, Physics of Amorphous Semiconductor Devices, (21 August 1987); https://doi.org/10.1117/12.940162
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KEYWORDS
Amorphous semiconductors

Data modeling

Monte Carlo methods

Physics

Composites

Silver

Ferroelectric materials

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