The Distribution Of Deep States In Hydrogenated Amorphous Silicon

Eric Snow

doi:10.1117/12.940158

21 August 1987 The Distribution Of Deep States In Hydrogenated Amorphous Silicon

Eric Snow

Author Affiliations +

Proceedings Volume 0763, Physics of Amorphous Semiconductor Devices; (1987) https://doi.org/10.1117/12.940158
Event: OE LASE'87 and EO Imaging Symposium, 1987, Los Angeles, CA, United States

Abstract

The distribution of deep states in undoped a-Si:H is investigated. For this purpose, a new experimental technique is introduced which is based on the principle of thermally-stimulated space-charge relaxation. A peak in the density of states is resolved at - 0.6 eV below the mobility edge of the conduction band. The energy position and magnitude of this peak are found to be consistent with space-charge-limited current measurements.

Citation Download Citation

Eric Snow "The Distribution Of Deep States In Hydrogenated Amorphous Silicon", Proc. SPIE 0763, Physics of Amorphous Semiconductor Devices, (21 August 1987); https://doi.org/10.1117/12.940158

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

;

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE