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1 December 2009 Q-switched Yb-doped microstructure fiber laser using GaAs as saturable absorber
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Proceedings Volume 7630, Passive Components and Fiber-based Devices VI; 76300P (2009) https://doi.org/10.1117/12.852193
Event: Asia Communications and Photonics, 2009, Shanghai, Shanghai , China
Abstract
A passive Q-switched Yb-doped microstructure fiber (MF) laser is demonstrated using a GaAs wafer as the saturable absorber. A high Ytterbium-doped fiber with a core diameter of 21 μm and a numerical aperture of 0.04 was used as the active fiber. The large-diameter core allows for greater energy storage than conventional single-mode core designs and the small NA of the core ensures the good beam quality of the laser. A pulse duration as short as 80 ns was obtained with the maximum repetition rate of 830 Hz. The maximum average output power is 5.8 W at 1080 nm wavelength.
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Shenggui Fu and Xiaojuan Liu "Q-switched Yb-doped microstructure fiber laser using GaAs as saturable absorber", Proc. SPIE 7630, Passive Components and Fiber-based Devices VI, 76300P (1 December 2009); https://doi.org/10.1117/12.852193
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