2 December 2009 Silicon wires and compact multi-mode interference splitters with an uneven splitting ratio
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Proceedings Volume 7630, Passive Components and Fiber-based Devices VI; 763010 (2009); doi: 10.1117/12.851579
Event: Asia Communications and Photonics, 2009, Shanghai, Shanghai , China
Abstract
We report the fabrication and accurate measurement of propagation and bending losses in silicon wires with submicron dimensions fabricated on silicon-on-insulator wafer. Propagation loss of 0.71±0.03dB/mm for the TE polarization was measured at the 1.55μm. Loss of per 90º bend is measured to be 0.01dB for a bending radius of 5μm. Three types of compact MMI splitters with different splitting-ratios were fabricated and measured. The splitting-ratios are respectively 50:50, 15:85 and 28:72. They exhibited low excess losses of about 1.5~3.9dB. The splitting-ratios were consistent with the design values.
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Jingtao Zhou, Huajun Shen, Huihui Zhang, Xinyu Liu, "Silicon wires and compact multi-mode interference splitters with an uneven splitting ratio", Proc. SPIE 7630, Passive Components and Fiber-based Devices VI, 763010 (2 December 2009); doi: 10.1117/12.851579; https://doi.org/10.1117/12.851579
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KEYWORDS
Silicon

Brain-machine interfaces

Photonic integrated circuits

Scanning electron microscopy

Electron beam lithography

Wave propagation

Etching

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