2 December 2009 Low-power electro-optical switch based on a III-V microdisk cavity on a silicon-on-insulator circuit
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Proceedings Volume 7631, Optoelectronic Materials and Devices IV; 76310P (2009) https://doi.org/10.1117/12.851966
Event: Asia Communications and Photonics, 2009, Shanghai, Shanghai , China
Abstract
We introduce a compact, low-power electro-optical switch on a silicon-on-insulator circuit through heterogeneous integration. A 10μm diameter III-V microdisk cavity is employed as the switching element. Switching of a 10Gbps optical signal is demonstrated by sweeping the bias between -1.1V and +0.9V with 15dB extinction ratio and 1.2ns switching speed.
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Liu Liu, Günther Roelkens, Thijs Spuesens, Richard Soref, Philippe Regreny, Dries Van Thourhout, Roel Baets, "Low-power electro-optical switch based on a III-V microdisk cavity on a silicon-on-insulator circuit", Proc. SPIE 7631, Optoelectronic Materials and Devices IV, 76310P (2 December 2009); doi: 10.1117/12.851966; https://doi.org/10.1117/12.851966
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