2 December 2009 Low-power electro-optical switch based on a III-V microdisk cavity on a silicon-on-insulator circuit
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Proceedings Volume 7631, Optoelectronic Materials and Devices IV; 76310P (2009) https://doi.org/10.1117/12.851966
Event: Asia Communications and Photonics, 2009, Shanghai, Shanghai , China
Abstract
We introduce a compact, low-power electro-optical switch on a silicon-on-insulator circuit through heterogeneous integration. A 10μm diameter III-V microdisk cavity is employed as the switching element. Switching of a 10Gbps optical signal is demonstrated by sweeping the bias between -1.1V and +0.9V with 15dB extinction ratio and 1.2ns switching speed.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Liu Liu, Liu Liu, Günther Roelkens, Günther Roelkens, Thijs Spuesens, Thijs Spuesens, Richard Soref, Richard Soref, Philippe Regreny, Philippe Regreny, Dries Van Thourhout, Dries Van Thourhout, Roel Baets, Roel Baets, } "Low-power electro-optical switch based on a III-V microdisk cavity on a silicon-on-insulator circuit", Proc. SPIE 7631, Optoelectronic Materials and Devices IV, 76310P (2 December 2009); doi: 10.1117/12.851966; https://doi.org/10.1117/12.851966
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