2 December 2009 Doping profile effect on picosecond lasing of an internally Q-switched, high-power laser diode
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Proceedings Volume 7631, Optoelectronic Materials and Devices IV; 763113 (2009) https://doi.org/10.1117/12.851642
Event: Asia Communications and Photonics, 2009, Shanghai, Shanghai , China
Abstract
The recently demonstrated high-power (50W from a 20μm stripe) picosecond (30ps) lasing from a laser diode has led us to address the internal Q-switching phenomenon, discovered four decades ago and not yet fully understood. We found that the realization of a nanosecond or picosecond mode in a diode depends on the doping profile across the structure.
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Brigitte Lanz, Brigitte Lanz, Sergey Vainshtein, Sergey Vainshtein, Juha Kostamovaara, Juha Kostamovaara, Vladimir Lantratov, Vladimir Lantratov, Nikolay Kalyuzhnyy, Nikolay Kalyuzhnyy, } "Doping profile effect on picosecond lasing of an internally Q-switched, high-power laser diode", Proc. SPIE 7631, Optoelectronic Materials and Devices IV, 763113 (2 December 2009); doi: 10.1117/12.851642; https://doi.org/10.1117/12.851642
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