2 December 2009 High data rate 850-nm oxide VCSEL for 20 Gbit/s application and beyond
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Proceedings Volume 7631, Optoelectronic Materials and Devices IV; 763119 (2009) https://doi.org/10.1117/12.853250
Event: Asia Communications and Photonics, 2009, Shanghai, Shanghai , China
Abstract
In this paper we report a 850nm oxide VCSEL operating at 20 Gbit/s (PRBS31) with a 5 dB Extinction Ratio, based on a volume manufacturing platform with MOCVD grown GaAs/AlGaAs epi-material. We present detailed time and frequency domain VCSEL characterization results, and a finite element simulation showing good agreement with experimental data.
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Chen Ji, Jingyi Wang, David Söderström, Laura Giovane, "High data rate 850-nm oxide VCSEL for 20 Gbit/s application and beyond", Proc. SPIE 7631, Optoelectronic Materials and Devices IV, 763119 (2 December 2009); doi: 10.1117/12.853250; https://doi.org/10.1117/12.853250
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