2 December 2009 Energy level properties of coupled quantum well and the optimal design for traveling-wave modulators
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Proceedings Volume 7631, Optoelectronic Materials and Devices IV; 76311A (2009) https://doi.org/10.1117/12.851852
Event: Asia Communications and Photonics, 2009, Shanghai, Shanghai , China
Abstract
The formation of the ground states in a GaAs/AlGaAs asymmetric coupled quantum-well is analyzed with the use of coupled-mode theory. Based on perfect work condition of traveling-wave modulators, the GaAs/AlGaAs coupled quantum-well is optimized and the optimal coupled quantum well has a large electro-refractive index change at low absorption loss.
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Zhixin Xu, Zhixin Xu, } "Energy level properties of coupled quantum well and the optimal design for traveling-wave modulators", Proc. SPIE 7631, Optoelectronic Materials and Devices IV, 76311A (2 December 2009); doi: 10.1117/12.851852; https://doi.org/10.1117/12.851852
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