2 December 2009 Energy level properties of coupled quantum well and the optimal design for traveling-wave modulators
Author Affiliations +
Proceedings Volume 7631, Optoelectronic Materials and Devices IV; 76311A (2009) https://doi.org/10.1117/12.851852
Event: Asia Communications and Photonics, 2009, Shanghai, Shanghai , China
Abstract
The formation of the ground states in a GaAs/AlGaAs asymmetric coupled quantum-well is analyzed with the use of coupled-mode theory. Based on perfect work condition of traveling-wave modulators, the GaAs/AlGaAs coupled quantum-well is optimized and the optimal coupled quantum well has a large electro-refractive index change at low absorption loss.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Zhixin Xu, Zhixin Xu, "Energy level properties of coupled quantum well and the optimal design for traveling-wave modulators", Proc. SPIE 7631, Optoelectronic Materials and Devices IV, 76311A (2 December 2009); doi: 10.1117/12.851852; https://doi.org/10.1117/12.851852
PROCEEDINGS
10 PAGES


SHARE
Back to Top