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2 December 2009 Silicon-based long wavelength photodetectors
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Proceedings Volume 7631, Optoelectronic Materials and Devices IV; 76311L (2009) https://doi.org/10.1117/12.852240
Event: Asia Communications and Photonics, 2009, Shanghai, Shanghai , China
Abstract
Three types of Si-based photodetectors (PD) operating at long wavelength were introduced: the strained SiGe/Si multi-quantum-wells PD and Ge/Si islands PD with resonant cavity enhanced (RCE) structure, Ge p-i-n PD on silicon and SOI, Ge/Si avalanche photodetectors (APDs) with separate absorption, charge and multiplication (SACM) structure. The strained SiGe/Si MQW RCE PD and Ge/Si islands RCE PD has a threefold enhanced responsivity compared with the conventional PD without a resonant cavity. The Ge p-i-n PD on SOI has a responsivity of 0.65 A/W at 1.31μm and 0.32 A/W at 1.55μm. The 3dB bandwidth is 13.3GHz at reverse bias of 3 V. The Ge/Si SACM APD operating at 1310 nm have a responsivity of 4.4A/W (with a gain of 8.8) biased at 90% of break voltage.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Buwen Cheng, Haiyun Xue, Chunlai Xue, Chuanbo Li, Cheng Li, Weixuan Hu, Yuhua Zuo, and Qiming Wang "Silicon-based long wavelength photodetectors", Proc. SPIE 7631, Optoelectronic Materials and Devices IV, 76311L (2 December 2009); https://doi.org/10.1117/12.852240
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