2 December 2009 Photoluminescence properties of Nd-O+-codoped Si-based thin film
Author Affiliations +
Proceedings Volume 7631, Optoelectronic Materials and Devices IV; 76312G (2009) https://doi.org/10.1117/12.851422
Event: Asia Communications and Photonics, 2009, Shanghai, Shanghai , China
The photoluminescence(PL) spectra at room temperature for the Si-based samples doped by Nd, O+ by ion implantation are measured. The results show that all the samples possess blue-violet photoluminescence properties under the ultraviolet light excitation and its light emission is stable. The PL spectra has multiple peak structure. The results show the intensity of PL spectra is closely relative to Nd and O+ implantation and to the temperature of thermal annealing. The light emission is more greater for the sample of fisrt O+ then Nd ion-implanted silicon than the one of first Nd then O+ ion-implanted silicon. The light-emitiing mechanism is also analyzed.
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Meiling Yuan, Meiling Yuan, Chenfa Li, Chenfa Li, Xinli Leng, Xinli Leng, Qingnian Wang, Qingnian Wang, } "Photoluminescence properties of Nd-O+-codoped Si-based thin film", Proc. SPIE 7631, Optoelectronic Materials and Devices IV, 76312G (2 December 2009); doi: 10.1117/12.851422; https://doi.org/10.1117/12.851422


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