25 November 2009 Design of dichromatic white light-emitting diodes using InAlGaN irregular MQW structure
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Proceedings Volume 7635, Display, Solid-State Lighting, Photovoltaics, and Optoelectronics in Energy; 763502 (2009) https://doi.org/10.1117/12.851588
Event: Asia Communications and Photonics, 2009, Shanghai, Shanghai , China
Abstract
A new approach for the design of dichromatic white light-Emitting Diodes (LEDs) has been proposed by employing InAlGaN irregular multiple quantum well (IMQW) structures. The InAlGaN IMQW structures are assembled by two different type QWs emitting complementary wavelengths. The electronic and optical properties of the designed InAlGaN IMQWs have been analyzed in details by fully considering the effects of strain, well-coupling, valence band-mixing and quasi-bound states using a newly developed theoretical model from the k•p theory. The influence of material components, well width and well number of different type QWs, and barrier thickness on the spontaneous emission spectra of InAlGaN IMQWs was studied. The IMQW structure was obtained which can realize near white light emission by optimizing the structure parameters of IMQW structure for dichromatic white LEDs.
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Hui-Min Lu, Hui-Min Lu, Gen-Xiang Chen, Gen-Xiang Chen, Chun-Hui Qi, Chun-Hui Qi, Tao Xia, Tao Xia, } "Design of dichromatic white light-emitting diodes using InAlGaN irregular MQW structure", Proc. SPIE 7635, Display, Solid-State Lighting, Photovoltaics, and Optoelectronics in Energy, 763502 (25 November 2009); doi: 10.1117/12.851588; https://doi.org/10.1117/12.851588
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