25 November 2009 New materials of co-doped ZnO for LEDs and thin films solar cells
Author Affiliations +
Proceedings Volume 7635, Display, Solid-State Lighting, Photovoltaics, and Optoelectronics in Energy; 76350H (2009) https://doi.org/10.1117/12.849504
Event: Asia Communications and Photonics, 2009, Shanghai, Shanghai , China
Abstract
Zr-Al co-doped ZnO (AZZO) were prepared by DC magnetron sputtering on glass slide substrates under different sputtering powers. Microstructure, Electrical and optical properties of AZZO thin films were investigated. The AZZO films with an electrical resistivity as low as 1.07x10-3Ωcm and an average optical transmission of 88.5% in the visible range were obtained at DC power of 170 W. The optical bandgap depends on the deposition condition, and was in the range of 3.48-3.57 eV. These results make the possibility for light emitting diodes(LEDs) and solar cells with AZZO films as transparent electrodes.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yu-zhen Yuan, Yu-zhen Yuan, Hui Wang, Hui Wang, } "New materials of co-doped ZnO for LEDs and thin films solar cells", Proc. SPIE 7635, Display, Solid-State Lighting, Photovoltaics, and Optoelectronics in Energy, 76350H (25 November 2009); doi: 10.1117/12.849504; https://doi.org/10.1117/12.849504
PROCEEDINGS
8 PAGES


SHARE
RELATED CONTENT


Back to Top