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19 March 2010 First generation laser-produced plasma source system for HVM EUV lithography
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The 1st generation Laser-Produced Plasma source system "ETS" device for EUV lithography is under development. We report latest status of the device which consists of the original concepts (1) CO2 laser driven Sn plasma, (2) Hybrid CO2 laser system that is combination of high speed (>100kHz) short pulse oscillator and industrial cw-CO2, (3) Magnetic mitigation, and (4) Double pulse EUV plasma creation. Maximum burst on time power is 69W (100kHz, 0.7 mJ EUV power @ intermediate focus), laser-EUV conversion efficiency is 2.3%, duty cycle is 20% at maximum. Continuous operation time is so far up to 3 hours. Debris is efficiently suppressed by pre-pulse plasma formation and magnetic field mitigation system. Long-term performance is now under investigation. Also future plan is updated.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hakaru Mizoguchi, Tamotsu Abe, Yukio Watanabe, Takanobu Ishihara, Takeshi Ohta, Tsukasa Hori, Akihiko Kurosu, Hiroshi Komori, Kouji Kakizaki, Akira Sumitani, Osamu Wakabayashi, Hiroaki Nakarai, Junichi Fujimoto, and Akira Endo "First generation laser-produced plasma source system for HVM EUV lithography", Proc. SPIE 7636, Extreme Ultraviolet (EUV) Lithography, 763608 (19 March 2010);

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