20 March 2010 Carbon contamination topography analysis of EUV masks
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Abstract
The impact of carbon contamination on extreme ultraviolet (EUV) masks is significant due to throughput loss and potential effects on imaging performance. Current carbon contamination research primarily focuses on the lifetime of the multilayer surfaces, determined by reflectivity loss and reduced throughput in EUV exposure tools. However, contamination on patterned EUV masks can cause additional effects on absorbing features and the printed images, as well as impacting the efficiency of cleaning process. In this work, several different techniques were used to determine possible contamination topography. Lithographic simulations were also performed and the results compared with the experimental data.
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Yu-Jen Fan, Yu-Jen Fan, Leonid Yankulin, Leonid Yankulin, Petros Thomas, Petros Thomas, Chimaobi Mbanaso, Chimaobi Mbanaso, Alin Antohe, Alin Antohe, Rashi Garg, Rashi Garg, Yunfei Wang, Yunfei Wang, Thomas Murray, Thomas Murray, Andrea Wüest, Andrea Wüest, Frank Goodwin, Frank Goodwin, Sungmin Huh, Sungmin Huh, Aaron Cordes, Aaron Cordes, Patrick Naulleau, Patrick Naulleau, Kenneth Goldberg, Kenneth Goldberg, Iacopo Mochi, Iacopo Mochi, Eric Gullikson, Eric Gullikson, Gregory Denbeaux, Gregory Denbeaux, } "Carbon contamination topography analysis of EUV masks", Proc. SPIE 7636, Extreme Ultraviolet (EUV) Lithography, 76360G (20 March 2010); doi: 10.1117/12.846996; https://doi.org/10.1117/12.846996
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