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20 March 2010 Carbon contamination topography analysis of EUV masks
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The impact of carbon contamination on extreme ultraviolet (EUV) masks is significant due to throughput loss and potential effects on imaging performance. Current carbon contamination research primarily focuses on the lifetime of the multilayer surfaces, determined by reflectivity loss and reduced throughput in EUV exposure tools. However, contamination on patterned EUV masks can cause additional effects on absorbing features and the printed images, as well as impacting the efficiency of cleaning process. In this work, several different techniques were used to determine possible contamination topography. Lithographic simulations were also performed and the results compared with the experimental data.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yu-Jen Fan, Leonid Yankulin, Petros Thomas, Chimaobi Mbanaso, Alin Antohe, Rashi Garg, Yunfei Wang, Thomas Murray, Andrea Wüest, Frank Goodwin, Sungmin Huh, Aaron Cordes, Patrick Naulleau, Kenneth Goldberg, Iacopo Mochi, Eric Gullikson, and Gregory Denbeaux "Carbon contamination topography analysis of EUV masks", Proc. SPIE 7636, Extreme Ultraviolet (EUV) Lithography, 76360G (20 March 2010);

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