20 March 2010 Resist pattern prediction at EUV
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Proceedings Volume 7636, Extreme Ultraviolet (EUV) Lithography; 76360R (2010); doi: 10.1117/12.846535
Event: SPIE Advanced Lithography, 2010, San Jose, California, United States
Abstract
Accurate and flexible simulation methods may be used to further a researcher's understanding of how complex resist effects influence the patterning of critical structures. In this work, we attempt to gain insight into the behavior of a state-of-the-art EUV resist through the use of stochastic resist simulation. The statistics of photon and molecule counting are discussed. A discrete, probabilistic ionization and electron scattering simulator for acid generation at EUV is discussed. At EUV, acid generators are hypothesized to be activated by secondary electrons yielded by ionization of the resist upon absorption of photons. Model fit to experimental data of mean CD and LWR for a state-of-the-art EUV resist is shown.
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John J. Biafore, Mark D. Smith, Eelco van Setten, Tom Wallow, Patrick Naulleau, David Blankenship, Stewart A. Robertson, Yunfei Deng, "Resist pattern prediction at EUV", Proc. SPIE 7636, Extreme Ultraviolet (EUV) Lithography, 76360R (20 March 2010); doi: 10.1117/12.846535; https://doi.org/10.1117/12.846535
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KEYWORDS
Extreme ultraviolet

Line width roughness

Absorption

Ionization

Molecules

Stochastic processes

Data modeling

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