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20 March 2010 Mask inspection technologies for 22nm HP and beyond
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Abstract
Reticle quality and the capability to qualify a reticle are key issues for EUV Lithography. We expect current and planned optical inspection systems will provide inspection capability adequate for development and production of 2X HP masks. We illustrate inspection technology extendibility through simulation of 193nm-based inspection of advanced EUV patterned masks. The influence of EUV absorber design for 193nm optical contrast and defect sensitivity will be identified for absorber designs of current interest.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Daniel Wack, Qiang Q. Zhang, Gregg Inderhees, and Dan Lopez "Mask inspection technologies for 22nm HP and beyond", Proc. SPIE 7636, Extreme Ultraviolet (EUV) Lithography, 76360V (20 March 2010); https://doi.org/10.1117/12.850766
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