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20 March 2010 Techniques for removal of contamination from EUVL mask without surface damage
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Mask defectivity is an acknowledged road block for the introduction of EUV lithography (EUVL) for manufacturing. There are significant challenges to extend the conventional methods of cleaning developed for standard 193nm optical photomask to meet the specific requirements for EUV mask structure and materials. In this work, the use of UV activated media for EUV mask surface cleaning is evaluated and the effects on Ru capping layer integrity are compared against conventional cleaning methods. Ru layer surface is analyzed using roughness measurements (AFM) and reflectivity changes (EUV-R and optical).
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sherjang Singh, Ssuwei Chen, Tobias Wähler, Rik Jonckheere, Ted Liang, Robert J. Chen, and Uwe Dietze "Techniques for removal of contamination from EUVL mask without surface damage", Proc. SPIE 7636, Extreme Ultraviolet (EUV) Lithography, 76360Y (20 March 2010);

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