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20 March 2010 Inspecting EUV mask blanks with a 193nm system
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Abstract
Data and simulation results characterizing the capability of a DUV system to inspect EUV mask blanks and substrates are reported. Phase defects and particles on multilayer (ML) surfaces, ARC-coated absorber, and substrate material are considered. In addition to the previously reported results of inspecting phase defects on multilayer surfaces, phase defects on a quartz substrate surface are shown. The principle of phase detection is described. Simulations show that the 22-nm node requirement for phase defect detection should be met, assuming a reduction in the multilayer roughness. Initial inspections of deposited SiO2 spheres show sensitivities of at least 40 nm on ML and quartz; however, the availability of calibrated spheres of smaller diameters has limited testing below this value. Simulation results show relative sensitivities for detecting SiO2 spheres of different diameters on various EUV materials.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Stan Stokowski, Joshua Glasser, Gregg Inderhees, and Phani Sankuratri "Inspecting EUV mask blanks with a 193nm system", Proc. SPIE 7636, Extreme Ultraviolet (EUV) Lithography, 76360Z (20 March 2010); https://doi.org/10.1117/12.850825
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