22 March 2010 EUV lithography at the 22nm technology node
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Abstract
We are evaluating the readiness of extreme ultraviolet (EUV) lithography for insertion into production at the 15 nm technology node by integrating it into standard semiconductor process flows because we believe that device integration exercises provide the truest test of technology readiness and, at the same time, highlight the remaining critical issues. In this paper, we describe the use of EUV lithography with the 0.25 NA Alpha Demo Tool (ADT) to pattern the contact and first interconnect levels of a large (~24 mm x 32 mm) 22 nm node test chip using EUV masks with state-of-the-art defectivity (~0.3 defects/cm2). We have found that: 1) the quality of EUVL printing at the 22 nm node is considerably higher than the printing produced with 193 nm immersion lithography; 2) printing at the 22 nm node with EUV lithography results in higher yield than double exposure double-etch 193i lithography; and 3) EUV lithography with the 0.25 NA ADT is capable of supporting some early device development work at the 15 nm technology node.
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Obert Wood, Obert Wood, Chiew-Seng Koay, Chiew-Seng Koay, Karen Petrillo, Karen Petrillo, Hiroyuki Mizuno, Hiroyuki Mizuno, Sudhar Raghunathan, Sudhar Raghunathan, John Arnold, John Arnold, Dave Horak, Dave Horak, Martin Burkhardt, Martin Burkhardt, Gregory McIntyre, Gregory McIntyre, Yunfei Deng, Yunfei Deng, Bruno La Fontaine, Bruno La Fontaine, Uzo Okoroanyanwu, Uzo Okoroanyanwu, Tom Wallow, Tom Wallow, Guillaume Landie, Guillaume Landie, Theodorus Standaert, Theodorus Standaert, Sean Burns, Sean Burns, Christopher Waskiewicz, Christopher Waskiewicz, Hirohisa Kawasaki, Hirohisa Kawasaki, James H.-C. Chen, James H.-C. Chen, Matthew Colburn, Matthew Colburn, Bala Haran, Bala Haran, Susan S.-C. Fan, Susan S.-C. Fan, Yunpeng Yin, Yunpeng Yin, Christian Holfeld, Christian Holfeld, Jens Techel, Jens Techel, Jan-Hendrik Peters, Jan-Hendrik Peters, Sander Bouten, Sander Bouten, Brian Lee, Brian Lee, Bill Pierson, Bill Pierson, Bart Kessels, Bart Kessels, Robert Routh, Robert Routh, Kevin Cummings, Kevin Cummings, } "EUV lithography at the 22nm technology node", Proc. SPIE 7636, Extreme Ultraviolet (EUV) Lithography, 76361M (22 March 2010); doi: 10.1117/12.847049; https://doi.org/10.1117/12.847049
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