22 March 2010 Process liability evaluation for beyond 22nm node using EUVL
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Extreme ultraviolet lithography (EUVL) is the most promising candidate for the manufacture of devices with a half pitch of 32 nm and beyond. We are now evaluating the process liability of EUVL in view of the current status of lithography technology development. In a previous study, we demonstrated the feasibility of manufacturing 32-nm-node devices by means of a wafer process that employed the EUV1, a full-field step-and-scan exposure tool. To evaluate yield, a test pattern was drawn on a multilayer resist and exposed. After development, the pattern was replicated in SiO2 film by etching, and metal wires were formed by a damascene process. Resolution enhancement is needed to advance to the 22- nm node and beyond, and a practical solution is off-axis illumination (OAI). This paper presents the results of a study on yield improvement that used a 32-nm-node test chip, and also clarifies a critical issue in the use of EUVL in a wafer process for device manufacture at the 22-nm node and beyond.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kazuo Tawarayama, Kazuo Tawarayama, Hajime Aoyama, Hajime Aoyama, Kentaro Matsunaga, Kentaro Matsunaga, Yukiyasu Arisawa, Yukiyasu Arisawa, Taiga Uno, Taiga Uno, Shunko Magoshi, Shunko Magoshi, Suigen Kyoh, Suigen Kyoh, Yumi Nakajima, Yumi Nakajima, Ryoichi Inanami, Ryoichi Inanami, Satoshi Tanaka, Satoshi Tanaka, Ayumi Kobiki, Ayumi Kobiki, Yukiko Kikuchi, Yukiko Kikuchi, Daisuke Kawamura, Daisuke Kawamura, Kosuke Takai, Kosuke Takai, Koji Murano, Koji Murano, Yumi Hayashi, Yumi Hayashi, Ichiro Mori, Ichiro Mori, } "Process liability evaluation for beyond 22nm node using EUVL", Proc. SPIE 7636, Extreme Ultraviolet (EUV) Lithography, 76361O (22 March 2010); doi: 10.1117/12.846265; https://doi.org/10.1117/12.846265


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