23 March 2010 Multi-technique study of carbon contamination and cleaning of Mo/Si mirrors exposed to pulsed EUV radiation
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Proceedings Volume 7636, Extreme Ultraviolet (EUV) Lithography; 76361P (2010); doi: 10.1117/12.848197
Event: SPIE Advanced Lithography, 2010, San Jose, California, United States
Comparative lifetime studies of Mo/Si multilayer mirrors have been conducted at the Exposure Test Stand (ETS) using a pulsed Xe-discharge EUV source at XTREME Technologies GmbH (Göttingen, Germany). Due to the large, homogeneous exposed sample area a multi-technique study of EUV induced carbon contamination and cleaning can be conducted using standard surface science techniques. EUV-reflectometry, X-ray photoelectron spectroscopy (XPS), small-angle X-ray reflectometry (SAXR), and Out-of-band (OOB) reflectometry (200 - 1000 nm) were applied to investigate exposed samples and study EUV-induced changes of the surface composition. With this approach the influence of EUV-dose, cleaning-gas pressure and composition, and capping-layer material of the Mo/Si multilayer samples on the degradation and cleaning mechanism can be studied.
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Mark Schürmann, Sergiy Yulin, Viatcheslav Nesterenko, Torsten Feigl, Norbert Kaiser, Boris Tkachenko, Max C. Schürmann, "Multi-technique study of carbon contamination and cleaning of Mo/Si mirrors exposed to pulsed EUV radiation", Proc. SPIE 7636, Extreme Ultraviolet (EUV) Lithography, 76361P (23 March 2010); doi: 10.1117/12.848197; https://doi.org/10.1117/12.848197


Extreme ultraviolet lithography



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