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22 March 2010 Wavelength dependence of carbon contamination on mirrors with different capping layers
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Optics contamination remains one of the challenges in extreme ultraviolet (EUV) lithography. In addition to the desired wavelength near 13.5 nm (EUV), plasma sources used in EUV exposure tools emit a wide range of out-of-band (OOB) wavelengths extending as far as the visible region. We present experimental results of contamination rates of EUV and OOB light using a Xe plasma source and filters. Employing heated carbon tape as a source of hydrocarbons, we have measured the wavelength dependence of carbon contamination on a Ru-capped mirror. These results are compared to contamination rates on TiO2 and ZrO2 capping layers.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Petros Thomas, Leonid Yankulin, Yashdeep Khopkar, Rashi Garg, Chimaobi Mbanaso, Alin Antohe, Yu-Jen Fan, Gregory Denbeaux, Samir Aouadi, Vibhu Jindal, and Andrea Wüest "Wavelength dependence of carbon contamination on mirrors with different capping layers", Proc. SPIE 7636, Extreme Ultraviolet (EUV) Lithography, 76361X (22 March 2010); doi: 10.1117/12.847015;

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