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22 March 2010 Improvement of EUV mask defect printability evaluation
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Abstract
As regard to EUV-Mask natural defect printability evaluation, several methods have been employed in the past. However, because of their inherent difficulties those methods have not been able to provide precise answers. In this paper, we used two improved methods for the evaluation of EUV-Mask natural defect printability capable of providing precise answers. One improvement involves marking of the defect locations which makes it easier to find the wafer printed defects; the other method involves CD-averaging of multiple exposure shots that results in more quantifiable answers.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Noriaki Takagi, Hiroyuki Shigemura, Tsuyoshi Amano, Takashi Kamo, and Osamu Suga "Improvement of EUV mask defect printability evaluation", Proc. SPIE 7636, Extreme Ultraviolet (EUV) Lithography, 763621 (22 March 2010); https://doi.org/10.1117/12.846333
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