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22 March 2010 Stochastic simulation of photon scattering for EUV mask defect inspection
Ting-Hang Pei; Kuen-Yu Tsai; Jia-Han Li
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Proceedings Volume 7636, Extreme Ultraviolet (EUV) Lithography; 763624 (2010) https://doi.org/10.1117/12.846695
Event: SPIE Advanced Lithography, 2010, San Jose, California, United States
Abstract
When EUV light is used to inspect mask defects, the reflective photons reveal information for both the mask structure and the mask defects. The number of reflective photons has to be enough for generating sufficient detector signals. A modeling technique based on Feynman path integral is utilized to calculate the number of reflective extreme-ultraviolet (EUV) photons scattered from photomask surfaces. For a 2D semicircular silicon defect, the capability of predicting the moving direction for each reemitting photon and the intensity of photons in different direction has been demonstrated.
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Ting-Hang Pei, Kuen-Yu Tsai, and Jia-Han Li "Stochastic simulation of photon scattering for EUV mask defect inspection", Proc. SPIE 7636, Extreme Ultraviolet (EUV) Lithography, 763624 (22 March 2010); https://doi.org/10.1117/12.846695
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