Translator Disclaimer
22 March 2010 Assessing out-of-band flare effects at the wafer level for EUV lithography
Author Affiliations +
Abstract
To accurately estimate the flare contribution from the out-of-band (OOB), the integration of a DUV source into the SEMATECH Berkeley 0.3-NA Micro-field Exposure tool is proposed, enabling precisely controlled exposures along with the EUV patterning of resists in vacuum. First measurements evaluating the impact of bandwidth selected exposures with a table-top set-up and subsequent EUV patterning show significant impact on line-edge roughness and process performance. We outline a simulation-based method for computing the effective flare from resist sensitive wavelengths as a function of mask pattern types and sizes. This simulation method is benchmarked against measured OOB flare measurements and the results obtained are in agreement.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Simi A. George, Patrick P. Naulleau, Charles D. Kemp, Paul E Denham, and Senajith Rekawa "Assessing out-of-band flare effects at the wafer level for EUV lithography", Proc. SPIE 7636, Extreme Ultraviolet (EUV) Lithography, 763626 (22 March 2010); https://doi.org/10.1117/12.847953
PROCEEDINGS
10 PAGES


SHARE
Advertisement
Advertisement
RELATED CONTENT


Back to Top