Mask roughness induced LER: a rule of thumb

Brittany M. McClinton; Patrick P. Naulleau

doi:10.1117/12.851226

22 March 2010 Mask roughness induced LER: a rule of thumb

Brittany M. McClinton, Patrick P. Naulleau

Proceedings Volume 7636, Extreme Ultraviolet (EUV) Lithography; 76362G (2010) https://doi.org/10.1117/12.851226
Event: SPIE Advanced Lithography, 2010, San Jose, California, United States

Abstract

Much work has already been done on how both the resist and line-edge roughness (LER) on the mask affect the final printed LER. What is poorly understood, however, is the extent to which system-level effects such as mask surface roughness, illumination conditions, and defocus couple to speckle at the image plane, and currently factor into LER limits. Here, we propose a "rule-of-thumb" simplified solution that provides a fast and powerful method to obtain mask roughness induced LER. We present modeling data on an older generation mask with a roughness of 230 pm as well as the ultimate target roughness of 50 pm. Moreover, we consider feature sizes of 50 nm and 22 nm, and show that as a function of correlation length, the LER peaks at the condition that the correlation length is approximately equal to the resolution of the imaging optic.

Citation Download Citation

Brittany M. McClinton and Patrick P. Naulleau "Mask roughness induced LER: a rule of thumb", Proc. SPIE 7636, Extreme Ultraviolet (EUV) Lithography, 76362G (22 March 2010); https://doi.org/10.1117/12.851226

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