This is the study report about post-develop defect on EUV resist. The resolution, sensitivity, LWR, etc. of EUV resist
have been currently studied in the development phase. We have acknowledged that resist generates a lot of defects in its
transition from i-line, KrF, ArF and immersion-ArF. However, those were just a couple of defect types in the transition,
and they were eliminated through resist improvement.
In this study, we confirmed EUV defect type using EUV exposure tool. We also evaluate defect generation using tetrabutyl-
ammonium-hydroxide (TBAH) developer. We finally discuss on the difference of defect between using KrF and
EUV exposure tool, furthermore difference of defect between using TMAH and TBAH developer.