22 March 2010 Development of novel positive-tone resists for EUVL
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Abstract
For improving resist performance, we have developed new Low-Molecular resists for which the substituted position and number of protecting group have no dispersion for controlling the chemical properties, such as solubility rate to alkaline developer. And we evaluated their Electron beam (EB) and Extreme Ultraviolet (EUV) patterning performance. The EUV lithographic evaluation of these resists was carried out at SFET (small field exposure tool) in Semiconductor Leading Edge Technologies Inc. (Selete). Newly synthesized resists have shown high performance of sensitivity and resolution under EB or EUV exposures. In this paper, we outline the design of new low molecular weight resists. The material properties, EUV outgassing analysis and the patterning capability of these newly synthesized low molecular weight resists are reported.
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Takanori Owada, Hideaki Shiotani, Kayoko Aoyama, Takashi Kashiwamura, Mitsuru Shibata, Testuro Takeya, Hiroaki Oizumi, Toshiro Itani, "Development of novel positive-tone resists for EUVL", Proc. SPIE 7636, Extreme Ultraviolet (EUV) Lithography, 763632 (22 March 2010); doi: 10.1117/12.846069; https://doi.org/10.1117/12.846069
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