22 March 2010 Development of novel positive-tone resists for EUVL
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For improving resist performance, we have developed new Low-Molecular resists for which the substituted position and number of protecting group have no dispersion for controlling the chemical properties, such as solubility rate to alkaline developer. And we evaluated their Electron beam (EB) and Extreme Ultraviolet (EUV) patterning performance. The EUV lithographic evaluation of these resists was carried out at SFET (small field exposure tool) in Semiconductor Leading Edge Technologies Inc. (Selete). Newly synthesized resists have shown high performance of sensitivity and resolution under EB or EUV exposures. In this paper, we outline the design of new low molecular weight resists. The material properties, EUV outgassing analysis and the patterning capability of these newly synthesized low molecular weight resists are reported.
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Takanori Owada, Takanori Owada, Hideaki Shiotani, Hideaki Shiotani, Kayoko Aoyama, Kayoko Aoyama, Takashi Kashiwamura, Takashi Kashiwamura, Mitsuru Shibata, Mitsuru Shibata, Testuro Takeya, Testuro Takeya, Hiroaki Oizumi, Hiroaki Oizumi, Toshiro Itani, Toshiro Itani, } "Development of novel positive-tone resists for EUVL", Proc. SPIE 7636, Extreme Ultraviolet (EUV) Lithography, 763632 (22 March 2010); doi: 10.1117/12.846069; https://doi.org/10.1117/12.846069

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