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22 March 2010 Scissionable polymer resists for extreme ultraviolet lithography
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Abstract
A new type of scissionable polymer based on main-chain acid-labile acetal linkages is reported as a photoresist for e-beam and EUV lithography. Four kinds of copolymers were synthesized via ring-opening metathesis polymerization (ROMP) using various ratios of acetal and norbornene-derivative monomers. Differential scanning calorimetry (DSC) analysis demonstrated that incorporation of bulky structure, i.e., norbornene-derivatives, provided copolymers with high Tg. According to thermogravimetric analysis (TGA), these copolymers had slight weight loss in the temperature range from 100 to 250°C. This weight loss is tentatively assigned to a cleavage process due to the presence of the acetal units. Both GPC and NMR analyses revealed that the main-chain of these copolymers was steadily chopped at scission moieties of acetal units by strong acids in solution, and was also chopped by photo-generated acid from PAG in thin-film. A steric barrier to the scissionable moiety is considered to hinder acidolysis, leading to improvement of main-chain stability. These copolymers were confirmed to make fine patterns by e-beam exposure, demonstrating them to be promising materials as photoresists for EUV lithography. Significant improvements are needed to meet the required resolution and photospeed performance for incorporation into viable EUV resists.
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Yoichi Ogata, Georgeta Masson, Yoshi Hishiro, and James M. Blackwell "Scissionable polymer resists for extreme ultraviolet lithography", Proc. SPIE 7636, Extreme Ultraviolet (EUV) Lithography, 763634 (22 March 2010); https://doi.org/10.1117/12.847320
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